A team of Chinese researchers has developed the world’s smallest ferroelectric transistor with ultralow power consumption, offering new insights into progress in the semiconductor industry, according to a study published recently in the journal Science Advances.
In advanced semiconductor manufacturing processes, the operating voltage of logic chips has been reduced to 0.7 volts to achieve high energy efficiency. However, mainstream non-volatile memory, such as NAND flash, previously required 5 volts or higher to complete write operations.
This mismatch lead to the integration of complex circuits for voltage step-up or step-down to enable collaboration between logic and memory units. Such integration resulted in additional power consumption, wasted space, and data transfer bottlenecks between logic and memory.
The team from Peking University led by Qiu Chenguang, a senior researcher, and Peng Lianmao, an academician of the Chinese Academy of Sciences, has developed nano-gate ferroelectric transistors with an ultralow operation voltage of 0.6 volts, successfully shrinking the physical size of the gate to 1 nanometer.
Source/ Xinhua News
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